Năm sinh: 1976

Nơi công tác: Bộ môn Vật lý đại cương, Khoa Vật lý, Trường ĐHKHTN, ĐHQGHN

Chuyên ngành: Khoa học vật liệu

Các công trình đã đăng trên các tạp chí quốc gia, quốc tế

1. N. Q. Thinh, I. P. Vorona, I. A. Buyanova, W. M. Chen, S. Limpijumnong, S. B. Zhang, Y. G. Hong, H. P. Xin, C. W. Tu, A. Utsumi, Y. Furukawa, S. Moon, A. Wakahara, and H. Yonezu, 2005. Properties of Ga-interstitial defects in Al_xGa_1-xN_yP_1-y, Phys. Rev. B 71, 125209 (2005).
2. N.Q. Thinh, I.P. Vorona, M. Izadifard, I. A. Buyanova, W.M. Chen, Y.G. Hong, H. P. Xin, and C. W. Tu; 2004. Formation of Ga interstitials in (Al,In)_yGa_1-yN_xP_1-x alloys and their role in carrier recombination, Appl. Phys. Lett. 85, 2827 (2004).
3. N.Q. Thinh, I.P. Vorona, I. A. Buyanova, W.M. Chen, Sukit Limpijumnong, S.B. Zhang, Y.G. Hong, H.P. Xin, C.W. Tu, A. Utsumi, Y. Furukawa, S. Moon, A. Wakahara, and H. Yonezu; 2004. Identification and electronic properties of Ga-interstitial defects in GaNP and AlGaNP, Phys. Rev. B 70, R121201 (2004).
4. Mt. Wagner, N.Q. Thinh, N.T. Son, W.M. Chen, E. Janzén, P.G. Baranov, E.N. Mokhov, C. Hallin, and J.L. Lindström; 2002. Ligand hyperfine interaction at the neutral silicon vacancy in 4H and 6H SiC, Phys. Rev. B 66, 155214 (2002).
5. N.Q. Thinh, I..A. Buyanova, W. M. Chen, H. P. Xin, and C. W. Tu; 2001. Formation of nonradiative defects in molecular beam epitaxial GaNAs studied by optically detected magnetic resonance, Appl. Phys. Lett. 79, 3089 (2001).
6. N. Q. Thinh, I. A. Buyanova, P. N. Hai, W. M. Chen, H. P. Xin, and C. W. Tu; 2001. Signature of an intrinsic point defect in GaNAs, Phys. Rev. B 63, 033203 (2001).
7. A. Buyanova, G. Pozina, P. N. Hai, N. Q. Thinh, J. P. Bergman, W. M. Chen, H. P. Xin, and C.W.Tu; 2000. Mechanism for Rapid Thermal Annealing Improvements in Undoped GaNxAs1-x/GaAs Structures Grown by Molecular Beam Epitaxy, Appl. Phys. Lett. 77, 2325 (2000).
8. Mt. Wagner, I.A. Buyanova, N.Q. Thinh, W.M. Chen, B. Monemar, J.L. Lindström, H. Amano, and I. Akasaki; 2000. Magneto-optical studies of the 0.88 eV PL emission in electron irradiated GaN, Phys. Rev. B 62, 16572-16577 (2000).

Các công trình đã đăng trong Tuyển tập hội nghị khoa học quốc gia, quốc tế

1. N.Q. Thinh, I. Vorona, I.A. Buyanova, W.M. Chen, Y.G. Hong, H.P.Xin, C.W.Tu, S. Limpijumnong, and S.B. Zhang; 2005. Ga-interstitial related defects in Ga(Al)NP, Proc. of the 27th Int. Conf. on the Physics of Semicond (Flagstaff, Arizona, USA; July 26-30, 2004) AIP Conf Proc. ed by J. Menendez and C.G. Van de Walle, Melville, New York 772, 259-260 (2005).
2. N. Q. Thinh, I. P. Vorona, I. A. Buyanova, W. M. Chen, S. Limpijumnong, S. B. Zhang, Y. G. Hong, H. P. Xin, C. W. Tu, A. Utsumi, Y. Furukawa, S. Moon, A. Wakahara, and H. Yonezu; 2005. Important grown-in defects in novel dilute nitride (Al,In)GaNP: Ga interstitials, Proc. of the 2005 MRS Spring Meeting (San Francisco, USA; March 28 - April 1, 2005) 2005 MRS Spring Meeting, Abstract Book p.105. (2005).
3. W. M. Chen, I. A. Buyanova, N.Q. Thinh, I.P. Vorona, T. Mchedlidze, M. Izadifard, S. Limpijumnong, S.B. Zhang, Y.G. Hong, H.P. Xin, C.W. Tu, A. Utsumi, Y. Furukawa, S. Moon, A. Wakahara, and H. Yonezu; Point defects in dilute III-N-As and III-N-P. 2005. Invited talk; Proc. of the Proc. of the 23rd International Conference on Defects in Semiconductors (ICDS-23) (Awaji Island, Japan; July 25-29, 2005) Proc. of the 23rd International Conference on Defects in Semiconductors (ICDS-23), (2005).
4. P. Vorona, N.Q. Thinh, I.A. Buyanova, W.M. Chen, H.P.Xin, and C.W.Tu; 2003. Identification of Ga interstitials in GaAlNP. 22nd Int. Conf. on Defects in Semiconductors; Aarhus, Denmark; July 28 - August 1, 2003; Physica B 340-342, 466 (2003).
5. W.M. Chen, N.Q. Thinh, I.A. Buyanova, H.P.Xin, and C.W.Tu; 2003. P-N defect in GaNP studied by optically detected magnetic resonance.The 22nd Int. Conf. on Defects in Semicond.; Aarhus, Denmark; July 28 - August 1, 2003; Physica B 340-342, 399 (2003).
6. W.M. Chen, N.Q. Thinh, I.A. Buyanova, H.P.Xin, and C.W.Tu, 2003. Identification of defects in GaNP by optically detected magnetic resonance.In the 45th Electronic Materials Conf.; Salt Lake City, USA; June 25 - 27, 2003; (2003).
7. W.M. Chen, N.Q. Thinh, I.A. Buyanova, P.N. Hai, H.P. Xin, C.W. Tu, Wei Li, and M. Pessa; 2002. Nature and formation of non-ratiative defect in GaNAs and InGaAsN. Proc. of the 2001 MRS Fall Meeting (Boston, USA; November 26 - 30, 2001) Materials Research Society Symposium - Proceedings 692, 67-72 (2002).
8. Mt. Wagner, N.Q. Thinh, N.T. Son, P.G. Baranov, E.N. Mokhov, C. Hallin, W.M. Chen, and E. Janzén; 2002. The neutral silicon vacancy in SiC: Ligand hyperfine interaction. International Conference on Silicon Carbide and Related Materials 2001; Tsukuba, Japan; October 28 - November 02; Mater. Sci. Forum 389-393, 501 (2002).
9. B. Monemar, P. P. Paskov, T. Paskova, G. Pozina, W. M. Chen, N. Q. Thinh, H. Amano, and I. Akasaki; 2001. Physics of III-Nitrides, from bulk to quantum structures.19th Nordic Semiconductor Meeting; Copenhagen, Denmark; May 23 - 20, 2001; Phys. Scr T101(2001).
10. N. Q. Thinh, I. A. Buyanova, W. M. Chen, H. P. Xin, and C. W. Tu, 2001. Grown-in intrinsic defect in GaNAs. Presented at the 21st International Conference on Defects in Semiconductors; Giessen, Germany; July 16 - 20, 2001.
11. N.Q. Thinh, I.A. Buyanova, P.N. Hai, W.M. Chen, H.P. Xin, and C.W. Tu; 2001. APS 2001 March Meeting; Seattle; March 12-16,2001; Properties of a grown-in intrinsic defect in GaNAs. Bull. Amer. Phys. Soc. 46, 1185 (2001).
12. A. Buyanova, W. M. Chen, G. Pozina, P. N. Hai, N. Q. Thinh, H. P. Xin, and C. W. Tu; 2001. Recombination Processes of GaNAs/GaAs structures: Effect of Rapid Thermal Annealing. Proc. of the ICPS-25, ed. by N. Miura and T. Ando (Springer-Verlag, Berlin; Osaka, Japan; Sept.17-22 2000) Springer Proceedings in Physics 87, 559 (2001).