Năm sinh: 1976
Nơi công tác: Bộ môn Vật lý đại cương, Khoa Vật lý, Trường ĐHKHTN, ĐHQGHN
Chuyên ngành: Khoa học vật liệu
Các công trình đã đăng trên các tạp chí quốc gia, quốc tế
-
N. Q. Thinh, I. P. Vorona, I. A. Buyanova, W. M. Chen, S. Limpijumnong, S. B. Zhang, Y. G. Hong, H. P. Xin, C. W. Tu, A. Utsumi, Y. Furukawa, S. Moon, A. Wakahara, and H. Yonezu, 2005. Properties of Ga-interstitial defects in AlxGa1-xNyP1-y, Phys. Rev. B 71, 125209 (2005).
-
N.Q. Thinh, I.P. Vorona, M. Izadifard, I. A. Buyanova, W.M. Chen, Y.G. Hong, H. P. Xin, and C. W. Tu; 2004. Formation of Ga interstitials in (Al,In)yGa1-yNxP1-x alloys and their role in carrier recombination, Appl. Phys. Lett. 85, 2827 (2004).
-
N.Q. Thinh, I.P. Vorona, I. A. Buyanova, W.M. Chen, Sukit Limpijumnong, S.B. Zhang, Y.G. Hong, H.P. Xin, C.W. Tu, A. Utsumi, Y. Furukawa, S. Moon, A. Wakahara, and H. Yonezu; 2004. Identification and electronic properties of Ga-interstitial defects in GaNP and AlGaNP, Phys. Rev. B 70, R121201 (2004).
-
Mt. Wagner, N.Q. Thinh, N.T. Son, W.M. Chen, E. Janzén, P.G. Baranov, E.N. Mokhov, C. Hallin, and J.L. Lindström; 2002. Ligand hyperfine interaction at the neutral silicon vacancy in 4H and 6H SiC, Phys. Rev. B 66, 155214 (2002).
-
N.Q. Thinh, I..A. Buyanova, W. M. Chen, H. P. Xin, and C. W. Tu; 2001. Formation of nonradiative defects in molecular beam epitaxial GaNAs studied by optically detected magnetic resonance, Appl. Phys. Lett. 79, 3089 (2001).
-
N. Q. Thinh, I. A. Buyanova, P. N. Hai, W. M. Chen, H. P. Xin, and C. W. Tu; 2001. Signature of an intrinsic point defect in GaNAs, Phys. Rev. B 63, 033203 (2001).
-
A. Buyanova, G. Pozina, P. N. Hai, N. Q. Thinh, J. P. Bergman, W. M. Chen, H. P. Xin, and C.W.Tu; 2000. Mechanism for Rapid Thermal Annealing Improvements in Undoped GaNxAs1-x/GaAs Structures Grown by Molecular Beam Epitaxy, Appl. Phys. Lett. 77, 2325 (2000).
-
Mt. Wagner, I.A. Buyanova, N.Q. Thinh, W.M. Chen, B. Monemar, J.L. Lindström, H. Amano, and I. Akasaki; 2000. Magneto-optical studies of the 0.88 eV PL emission in electron irradiated GaN, Phys. Rev. B 62, 16572-16577 (2000).
Các công trình đã đăng trong Tuyển tập hội nghị khoa học quốc gia, quốc tế
-
N.Q. Thinh, I. Vorona, I.A. Buyanova, W.M. Chen, Y.G. Hong, H.P.Xin, C.W.Tu, S. Limpijumnong, and S.B. Zhang; 2005. Ga-interstitial related defects in Ga(Al)NP, Proc. of the 27th Int. Conf. on the Physics of Semicond (Flagstaff, Arizona, USA; July 26-30, 2004) AIP Conf Proc. ed by J. Menendez and C.G. Van de Walle, Melville, New York 772, 259-260 (2005).
-
N. Q. Thinh, I. P. Vorona, I. A. Buyanova, W. M. Chen, S. Limpijumnong, S. B. Zhang, Y. G. Hong, H. P. Xin, C. W. Tu, A. Utsumi, Y. Furukawa, S. Moon, A. Wakahara, and H. Yonezu; 2005. Important grown-in defects in novel dilute nitride (Al,In)GaNP: Ga interstitials, Proc. of the 2005 MRS Spring Meeting (San Francisco, USA; March 28 - April 1, 2005) 2005 MRS Spring Meeting, Abstract Book p.105. (2005).
-
W. M. Chen, I. A. Buyanova, N.Q. Thinh, I.P. Vorona, T. Mchedlidze, M. Izadifard, S. Limpijumnong, S.B. Zhang, Y.G. Hong, H.P. Xin, C.W. Tu, A. Utsumi, Y. Furukawa, S. Moon, A. Wakahara, and H. Yonezu; Point defects in dilute III-N-As and III-N-P. 2005. Invited talk; Proc. of the Proc. of the 23rd International Conference on Defects in Semiconductors (ICDS-23) (Awaji Island, Japan; July 25-29, 2005) Proc. of the 23rd International Conference on Defects in Semiconductors (ICDS-23), (2005).
-
P. Vorona, N.Q. Thinh, I.A. Buyanova, W.M. Chen, H.P.Xin, and C.W.Tu; 2003. Identification of Ga interstitials in GaAlNP. 22nd Int. Conf. on Defects in Semiconductors; Aarhus, Denmark; July 28 - August 1, 2003; Physica B 340-342, 466 (2003).
-
W.M. Chen, N.Q. Thinh, I.A. Buyanova, H.P.Xin, and C.W.Tu; 2003. P-N defect in GaNP studied by optically detected magnetic resonance.The 22nd Int. Conf. on Defects in Semicond.; Aarhus, Denmark; July 28 - August 1, 2003; Physica B 340-342, 399 (2003).
-
W.M. Chen, N.Q. Thinh, I.A. Buyanova, H.P.Xin, and C.W.Tu, 2003. Identification of defects in GaNP by optically detected magnetic resonance.In the 45th Electronic Materials Conf.; Salt Lake City, USA; June 25 - 27, 2003; (2003).
-
W.M. Chen, N.Q. Thinh, I.A. Buyanova, P.N. Hai, H.P. Xin, C.W. Tu, Wei Li, and M. Pessa; 2002. Nature and formation of non-ratiative defect in GaNAs and InGaAsN. Proc. of the 2001 MRS Fall Meeting (Boston, USA; November 26 - 30, 2001) Materials Research Society Symposium - Proceedings 692, 67-72 (2002).
-
Mt. Wagner, N.Q. Thinh, N.T. Son, P.G. Baranov, E.N. Mokhov, C. Hallin, W.M. Chen, and E. Janzén; 2002. The neutral silicon vacancy in SiC: Ligand hyperfine interaction. International Conference on Silicon Carbide and Related Materials 2001; Tsukuba, Japan; October 28 - November 02; Mater. Sci. Forum 389-393, 501 (2002).
-
B. Monemar, P. P. Paskov, T. Paskova, G. Pozina, W. M. Chen, N. Q. Thinh, H. Amano, and I. Akasaki; 2001. Physics of III-Nitrides, from bulk to quantum structures.19th Nordic Semiconductor Meeting; Copenhagen, Denmark; May 23 - 20, 2001; Phys. Scr T101(2001).
-
N. Q. Thinh, I. A. Buyanova, W. M. Chen, H. P. Xin, and C. W. Tu, 2001. Grown-in intrinsic defect in GaNAs. Presented at the 21st International Conference on Defects in Semiconductors; Giessen, Germany; July 16 - 20, 2001.
-
N.Q. Thinh, I.A. Buyanova, P.N. Hai, W.M. Chen, H.P. Xin, and C.W. Tu; 2001. APS 2001 March Meeting; Seattle; March 12-16,2001; Properties of a grown-in intrinsic defect in GaNAs. Bull. Amer. Phys. Soc. 46, 1185 (2001).
-
A. Buyanova, W. M. Chen, G. Pozina, P. N. Hai, N. Q. Thinh, H. P. Xin, and C. W. Tu; 2001. Recombination Processes of GaNAs/GaAs structures: Effect of Rapid Thermal Annealing. Proc. of the ICPS-25, ed. by N. Miura and T. Ando (Springer-Verlag, Berlin; Osaka, Japan; Sept.17-22 2000) Springer Proceedings in Physics 87, 559 (2001).
|