Năm sinh: 1968

Nơi công tác: Khoa Vật lý

Chuyên ngành: Vật lý Chất rắn.

Các công trình đã công bố trên các Tạp chí Quốc gia, Quốc tế:

1. L. Vu, T.D. Canh, N. An, D.T. Don and P.N. Hai, 1991. Infrared radiative sensor using Bi-Te thermoelectric thin films. Journal of Science (University of Hanoi, Vietnam) 5, p. 12.
2. D.T. Don and P.N. Hai, 1995. Gamma-irradiation-induced defects in mesa-epitaxial and planar silicon transistors. Communications in Physics (Vietnam) Vol. 5, 41.
3. P.N. Hai, T. Gregorkiewicz, C.A.J. Ammerlaan and D.T. Don, 1997. Electron-paramagnetic-resonance study of silver-induced defects in silicon. Phys. Rev. B 56, 4614.
4. P.N. Hai, T. Gregorkiewicz, C.A.J. Ammerlaan and D.T. Don, 1997. Copper-related defects in silicon: Electron-paramagnetic-resonance identification. Phys. Rev. B 56, 4620.
5. N.T. Son, P.N. Hai, Mt. Wagner, W.M. Chen, A. Ellison, C. Hallin, B. Monemar and E. Janzen, 1999. Optically detected magnetic resonance studies of intrinsic defects in 6H-SiC. Semicond. Sci. Technol. 14, 1141.
6. N.T. Son, P.N. Hai, P.T. Huy, T. Gregorkiewicz, C.A.J. Ammerlaan, J.L. Lindström, W.M. Chen, B. Monemar and E. Janzen, 1999. Electron paramagnetic resonance studies of defects in electron-irradiated p-type 4H and 6H SiC. Physica B 273-274, 655.
7. I.A. Buyanova, W.M. Chen, P.N. Hai, B. Monemar, H. Xin and C.W. Tu, 1999. Mechanism for light emission in GaNAs/GaAs structures grown by molecular beam epitaxy. Phys. Status Solidi B 216, 125.
8. P.N. Hai, W.M. Chen, I.A. Buyanova, H. Xin and C.W. Tu, 2000. Direct Determination of Electron Effective Mass in GaAsN/GaAs Quantum Wells. Appl. Phys. Lett. 77, 1843.
9. P.N. Hai, W.M. Chen, I.A. Buyanova, B. Monemar, H. Amano and I. Akasaki, 2000. Ga-related defect in as-grown Zn-doped GaN: An optically-detected magnetic resonance study. Phys. Rev. B 62 (Rapid Communication), 10607.
10. I.A. Buyanova, G. Pozina, P.N. Hai, N. Q. Thinh, J.P. Bergman, W.M. Chen, H. Xin and C.W. Tu, 2000. Mechanism for rapid thermal annealing in undoped GaN_xAs_1x/GaAs structures grown by molecular beam epitaxy. Appl. Phys. Lett. 77, 2325.
11. N.T. Son, P.N. Hai, W.M. Chen, C. Hallin, B. Monemar and E. Janzén, 2000. Hole effective masses in 4H SiC. Phys. Rev. B 61 (Rapid Communication), R10544.
12. N.Q. Thinh, I.A. Buyanova, P.N. Hai, W.M. Chen, H.P. Xin and C.W. Tu, 2000. Signature of an intrinsic point defect in GaNAs. Phys. Rev. B 63 (BRIEF REPORTS), 033203-1.
13. I.A. Buyanova, G. Pozina, P.N. Hai, W.M. Chen, H.P. Xin and C.W. Tu, 2000. Type I Band Alignment in the GaNAs/GaAs quantum wells. Phys. Rev. B 63 (BRIEF REPORTS), 033303-1.
14. N.T. Son, P.N. Hai and E. Janzén, 2001. Carbon vacancy-related defect in 4H and 6H SiC. Phys. Rev. B 63 (Rapid Communication), R201201.
15. H.J. von Bardeleben, J.L. Cantin, A. Zeinert, B. Racine, K. Zellama and P.N. Hai, 2001. Spins and microstructure of hydrogenated amorphous carbon: A multiple frequency electron paramagnetic resonance study. Appl. Phys. Lett. 78, 2843.
16. N.T. Son, P.N. Hai and E. Janzén, 2001. Silicon antisite in 4H SiC. Phys. Rev. Lett. 87, 045502-1.

Các công trình đăng trong Tuyển tập Hội nghị khoa học Quốc gia, Quốc tế

1. D.T. Don, P.N. Hai and N.D. Tien, 1992. An electronic differential thermometer for medical applications. Proceedings of The 4th Vietnam conference on Radio-Electronics, Vol. 1, 222.
2. D.T. Don and P.N. Hai, 1992. A home-made capacitance DLTS equipment. Proceedings of The 4th Vietnam conference on Radio-Electronics, Vol. 1, 170.
3. D.T. Don and P.N. Hai, 1992. The rate-window of the capacitance DLTS equipment using a double lock-in amplifier. Proceedings of The 4th Vietnam conference on Radio-Electronics, Vol. 1, 175.
4. D.T. Don and P.N. Hai, 1993. Deep levels in Pt-doped silicon diodes p+-n-n+. Proceedings of The 4th Vietnam conference on Physics, Vol. 1, 135.
5. D.T. Don and P.N. Hai, 1993. Shape of DLTS spectrum and applications for superposition DLTS splittings. Proceedings of The 4th Vietnam conference on Physics, Vol. 1, 140.
6. P.N. Hai, D.T. Don and P.T. Huy, 1995. Influence of the doping distribution and the local electric field on the thermal emission of the traps in the gamma irradiated mesa epitaxy silicon transistors. Proceedings of The 2nd international workshop on materials science (IWOMS"95), Vol. 1, 195.
7. C.A.J. Ammerlaan, P.N. Hai and T. Gregorkiewicz, 1996. Pseudo-Zeeman factors for transition ions in silicon. Proceedings of The 10^th Feofilov symposium on spectroscopy of crystals activated by rare-earth and transitional-metal ions (SPIE), Vol. 2706, 305.
8. P.N. Hai, T. Gregorkiewicz, C.A.J. Ammerlaan and D.T. Don, 1997. Isolated substitutional silver and silver-induced defects in silicon: An electron- paramagnetic-resonance investigation. Proceedings of the 19th International Conference on Defects in Semiconductors, Vols. 258-263 of Materials Science Forum, edited by G.Davies and M.H. Nazare (Trans Tech Publications, Zurich, Switzerland 1997), 491.
9. N.T. Son, P. N. Hai, A. Shuja, W.M. Chen, J.L. Lindström, B. Monemar and E. Janzen, 2000. The carbon vacancy pair in 4H and 6H SiC. Proc. of the ICSCRM "99, Mater. Sci. Forum 338-342, 821.
10. N.T. Son, P.N. Hai, W.M. Chen, C. Hallin, B. Monemar and E. Janzen, 2000. Hole effective masses in 4H SiC determined by optically detected cyclotron resonance. Proc. of the ICSCRM "99, Mater. Sci. Forum 338-342, 563.
11. W.M. Chen, P.N. Hai, Mt. Wagner, I.A. Buyanova, B. Monemar, H. Amano, I. Akasaki, H.P. Xin, and C.W. Tu, 1999. Optical and Microwave Double Resonance of III-nitrides. presented at the 1999 Joint International Meeting (the 196th Meeting of The Electrochemical Society (ECS) and the 1999 Fall Meeting of The Electrochemical Society of Japan (ECSJ)), Honolulu, Hawaii, October 17-22, 1999. Meeting Abstract Vol.99-2, Abs. No. 764.
12. I.A. Buyanova, P.N. Hai, W.M. Chen, H. Xin, and C.W. Tu, 2000. Photoluminescence Characterization of GaNAs/GaAs Structures Grown by Molecular Beam Epitaxy. Proc. of the Fifth IUMRS International Conference on Advanced Materials (IUMRS-ICAM"99); Mater. Sci. Eng. B 75, 166.
13. P.N. Hai, W.M. Chen, I.A. Buyanova, B. Monemar, H. P. Xin and C.W. Tu, 2000. Properties of GaAsN/GaAs quantum wells studied by optical detection of cyclotron resonance. Proc. of the European MRS Meeting 2000,, Mat. Sci. Eng. B 82, 218.
14. W.M. Chen, P.N. Hai, I.A. Buyanova, B. Monemar, H.P. Xin, and C.W. Tu, 2000. Optical Detection of Cyclotron Resonance (ODCR) in GaNAs/GaAs Quantum Well Structures. Proc. of the 2000 March meeting of the American Physical Society; Minneapolis, USA; 20 - 24 March, 2000; Bull. Amer. Phys. Soc., 992.
15. P.N. Hai, W.M. Chen, I.A. Buyanova, B. Monemar, H. Amano and I. Akasaki, 2001. Optically-detected magnetic resonance of a Ga-related defect in as-grown Zn-doped GaN. Proc. of the ICPS-25, ed. by N. Miura and T. Ando (Springer-Verlag, Berlin), Springer Proceedings in Physics 87, 1433.
16. I.A. Buyanova, W.M. Chen, G. Pozina, P.N. Hai, H.P. Xin and C.W. Tu, 2001. Recombination processes in GaNAs/GaAs structures: Effect of Rapid Thermal Annealing. Proc. of the ICPS-25, ed. by N. Miura and T. Ando (Springer-Verlag, Berlin), Springer Proceedings in Physics 87, 559.
17. I.A. Buyanova, G. Pozina, P.N. Hai, W.M. Chen, H.P. Xin, and C.W. Tu, 2001. Band alignment in the GaNAs/GaAs quantum structures. Proc. of the APS 2001 March Meeting; Seattle; March 12-16, 2001; Bull. Amer. Phys. Soc. 46, 350 (2001).
18. N.Q. Thinh, I.A. Buyanova, P.N. Hai, W.M. Chen, H.P. Xin, and C.W. Tu, 2001. Properties of a grown-in intrinsic defect in GaNAs. Proc. of the APS 2001 March Meeting; Seattle; March 12-16, 2001; Bull. Amer. Phys. Soc. 46, 1185.
19. P.N. Hai, N.C. Thanh, N.T.T. Hien, P.Q. Thanh, K.Q. Dat and P.T. Nga, 2002. Optical investigation of Eu-doped ZnO thin films by sol-gel deposition. Proceeding of the Fifth Vietnamese-German Seminar on Physics and Engineering, Vietnam, Feb. 2002.
20. P. N. Hai, M. Seki, S. Nishio, Y. Nakata and S. Horita, 2003. Characteristics of MOS structure formed by the humid gas mixture of O₂+O₃ at low temperature. Digest of Tech. Papers AM-LCD’03, 91.
21. M. Seki, P. N. Hai, S. Nishio, Y. Nakata and S. Horita, 2003. Fabrication of poly-Si thin film transistor using gate oxide layer formed by wet ozone-enriched oxidation. Digest of Tech. Papers IWD’03, 447.
22. P. N. Hai, T. Sekiguchi, K. Nishioka and S. Horita, 2004. Enhancement of silicon oxide growth at low temperature by pre-heated humid ozone-enriched gas. Digest of Tech. Papers AM-LCD’04, 197.
23. P. N. Hai, S. Nishio and S. Horita, 2004. Silicon oxide formation for TFTs using humid ozone-enriched gas ambient al low temperature. Proceeding of the 34^th European Solid-state Device Research Conference (ESSDERC 2004), 313.

Các đề tài/dự án đã và đang chủ trì:

1. Nghiên cứu tính chất quang của bột ZnO pha tạp nguyên tố đất hiếm Eu được chế tạo bằng phương pháp sol-gel. Đề tài cấp ĐHKHTNHN, mã số TN-02-07, 2002.